Transistor Level Modeling for Analog/RF IC Design
This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
| ISBN: | 9789048171484 |
|---|---|
| Sprache: | Englisch |
| Seitenzahl: | 294 |
| Produktart: | Kartoniert / Broschiert |
| Herausgeber: | Grabinski, Wladyslaw Nauwelaers, Bart Schreurs, Dominique |
| Verlag: | Springer Netherland |
| Veröffentlicht: | 19.10.2010 |
| Schlagworte: | Hardware Leistungsfeldeffekttransistor MOSFET Potential Standard VHDL Verilog analog field-effect transistor metal oxide semiconductur field-effect transistor |
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